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  ? freescale semiconductor, inc., 2004. all rights reserved. freescale semiconductor data sheet mcf5475ec rev. 2.1, 12/2004 table of contents this chapter contains electrical specification tables and reference timing diagrams for the mcf547 x microprocessor. this sect ion contains detailed information on power consid erations, dc/ac electrical characteristics, and ac tim ing specifications of the mcf547 x . note the parameters specified in this mpu document supersede any values found in the module specifications. 1 maximum ratings table 1 lists maximum and minimum ratings for supply and operating voltages and storage temperature. operating outside of thes e ranges may cause erratic behavior or damage to the processor. 1 maximum ratings................................................1 2 thermal characteristics ......................................2 3 dc electrical specifications ................................3 4 supply voltage sequencing and separation cautions ..............................................................5 5 output driver capability and loading .. ........ .......6 6 pll timing specifications ...................................7 7 reset timing specifications ................................8 8 flexbus................................................................9 9 sdram bus ......................................................11 10 pci bus .............................................................17 11 fast ethernet ac timing specifications ............18 12 general timing specificat ions.............. .............21 13 i 2 c input/output timing specifications .............21 14 jtag and boundary scan timing .....................23 15 dspi electrical specifications ...........................26 16 timer module ac timing specifications............26 mcf547 x integrated microprocessor electrical characteristics applies to the MCF5470, mcf5471, mcf5472, mcf5473, mcf5474, and mcf5475
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 thermal characteristics freescale semiconductor 2 2 thermal characteristics 2.1 operating temperatures table 2 lists junction and ambien t operating temperatures. 2.2 thermal resistance table 3 lists thermal resistance values. table 1. absolute maximum ratings rating symbol value units external (i/o pads) supply voltage (3.3-v power pins) ev dd ?0.3 to +4.0 v internal logic supply voltage iv dd ?0.5 to +2.0 v memory (i/o pads) supply voltage (2.5-v power pins) sd v dd ?0.3 to +4.0 sdr memory ?0.3 to +2.8 ddr memory v pll supply voltage pll v dd ?0.5 to +2.0 v internal logic supply voltage, input voltage level v in ?0.5 to +3.6 v storage temperature range t stg ?55 to +150 o c table 2. operating temperatures characteristic symbol value units maximum operating junction temperature t j 105 o c maximum operating ambient temperature t amax < 70 1 notes: 1 this published maximum operating ambient temperature should be used only as a system design guideline. all device operating parameters are guaranteed only when the junction temperature lies within the specified range. o c minimum operating ambient temperature t amin ?0 o c table 3. thermal resistance characteristic symbol value unit 324 pin tepbga ? junction to ambient, natural convection four layer board (2s2p) jma 22?24 1,2 c/w 388 pin tepbga ? junction to ambient, natural convection four layer board (2s2p) jma 20?22 1 , 2 c/w junction to ambient (@200 ft/min) four layer board (2s2p) jma 23 1 , 2 c/w junction to board jb 15 3 c/w junction to case jc 10 4 c/w junction to top of package natural convection jt 2 1 ,5 c/w
dc electrical specifications mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 3 3 dc electrical specifications table 4 lists dc electrical operating te mperatures. this table is based on an operating voltage of ev dd = 3.3 v dc 0.3 v dc and iv dd of 1.5 0.07 v dc . notes: 1 ja and jt parameters are simulated in accordance with eia/jesd standard 51-2 fo r natural convection. freescale recommends the use of ja and power dissipation specifications in the system design to prevent device junction temperatures from exceeding the rated specif ication. system designers sh ould be aware that device junction temperatures can be significantly influenced by boa rd layout and surrounding devices. conformance to the device junction temperature specificat ion can be verified by physical measur ement in the customer?s system using the jt parameter, the device power dissipation, and the method described in eia/jesd standard 51-2. 2 per jedec jesd51-6 with the board horizontal. 3 thermal resistance between the die and the printed ci rcuit board per jedec jesd51-8. board temperature is measured on the top surface of the board near the package. 4 thermal resistance between the die and the case top surface as measured by the cold plate method (mil spec-883 method 1012.1). 5 thermal characterization parameter indi cating the temperature difference between package top and the junction temperature per jedec jesd51-2. when greek letters are not available, the thermal characterization parameter is written as psi-jt. table 4. dc electrical specifications characteristic symbol min max units external (i/o pads) operation voltage range ev dd 3.0 3.6 v memory (i/o pads) operation voltage range (ddr memory) sd v dd 2.30 2.70 v internal logic operation voltage range 1 notes: 1 iv dd and pll v dd should be at the same voltage. pll v dd should have a filtered input. please see figure 1 for an example circuit. note: there are three pll v dd inputs. a filter circuit should used on each pll v dd input. iv dd 1.43 1.58 v pll analog operation voltage range 1 pll v dd 1.43 1.58 v usb oscillator operation voltage range usb_osv dd 3.0 3.6 v usb digital logic operation voltage range usbv dd 3.0 3.6 v usb phy operation voltage range usb_phyv dd 3.0 3.6 v usb oscillator analog operation voltage range usb_oscav dd 1.43 1.58 v usb pll operation voltage range usb_pllv dd 1.43 1.58 v input high voltage sstl 3.3v (sdr dram) v ih 2.0 3.6 v input low voltage sstl 3.3v (sdr dram) v il ?0.5 0.8 v input high voltage sstl 2.5v (ddr dram) v ih 2.0 2.8 v input low voltage sstl 2.5v (ddr dram) v il ?0.5 0.8 v output high voltage i oh = 8 ma, 16 ma,24 ma v oh 2.4 ? v output low voltage i ol = 8 ma, 16 ma,24 ma 5 v ol ?0.5 v capacitance 2 , v in =0 v, f=1 mhz 2 capacitance c in is periodically sampled rather than 100% tested. c in ?tbd pf
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 dc electrical specifications freescale semiconductor 4 3.1 pll power filtering to further enhance noise isolation, an external filter is strongly reco mmended for pll analog v dd pins. the filter shown in figure 1 should be connected between the board v dd and the pll v dd pins. the resistor and capacitors should be pla ced as close to the dedicated pll v dd pin as possible. figure 1. system pll v dd power filter 3.2 usb power filtering to minimize noise, a external filters are required fo r each of the usb power pi ns. the filter shown in figure 2 should be connected between the board ev dd or iv dd and each of the usb v dd pins. the resistor and capacitors should be pla ced as close to the dedicated usb v dd pin as possible. a separate filter circuit should be included for each usb v dd pin, a total of five circuits. figure 2. usb v dd power filter note in addition to the above filter ci rcuitry, a 0.01 f capacitor is also recommended in parallel with those shown. table 5 lists the resistor values and supply voltages to be used in the circui t for each of the usb v dd pins. table 5. usb filter circuit values usb v dd pin nominal voltag e resistor value (r) usb_oscvdd 3.3v 0 ? usbvdd 3.3v 0 ? usb_phyvdd 3.3v 0 ? usb_oscavdd 1.5v 0 ? usb_pllvdd 1.5v 10 ? board v dd 10 w 0.1 f pll v dd pin 10 f gnd board ev dd /iv dd r 0.1 f usb v dd pin 10 f gnd
supply voltage se quencing and separation cautions mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 5 4 supply voltage sequencing and separation cautions figure 3 shows situations in sequencing the i/o v dd (ev dd ), sdram v dd (sd v dd ), pll v dd (pll v dd ), and core v dd (iv dd ). figure 3. supply voltage sequencing and separation cautions the relationship between sd v dd and ev dd is non-critical during power- up and power-down sequences. both sd v dd (2.5v or 3.3v) and ev dd are specified relative to iv dd . 4.1 power up sequence if ev dd /sd v dd are powered up with the iv dd at 0v, then the sense circuits in the i/o pads will cause all pad output drivers connected to the ev dd /sd v dd to be in a high impedance state. there is no limit on how long after ev dd /sd v dd powers up before iv dd must power up. iv dd should not lead the ev dd , sd v dd or pll v dd by more than 0.4v during power ramp up, or there will be high current in the internal esd protection diodes. the rise times on the power s upplies should be slower th an 1 microsecond to avoid turning on the internal esd protection clamp diodes. ev dd , sd v dd (3.3v) sd v dd (2.5v) iv dd , pll v dd supplies stable 2 1 3.3v 2.5v 1.5v 0 time notes: iv dd should not exceed ev dd , sd v dd or pll v dd by more than 0.4v at any time, including power-up. recommended that iv dd /pll v dd should track ev dd /sd v dd up to 0.9v, then separate for completion of ramps. input voltage must not be grea ter than the supply voltage (ev dd , sd v dd , iv dd , or pll v dd ) by more than 0.5v at any time, including during power-up. use 1 microsecond or slower rise time for all supplies. 1. 2. 3. 4. dc power supply voltage
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 output driver capability and loading freescale semiconductor 6 the recommended power up sequence is as follows: 1. use 1 microsecond or slower rise time for all supplies. 2. iv dd /pll v dd and ev dd /sd v dd should track up to 0.9v, then separate for the completion of ramps with ev dd /sd v dd going to the higher external voltages. one way to accomplish this is to use a low drop-out voltage regulator. 4.2 power down sequence if iv dd pll v dd are powered down first, then sense circuits in the i/o pads will cau se all output drivers to be in a high impedance state. there is no limit on how long after iv dd and pll v dd power down before ev dd or sd v dd must power down. iv dd should not lag ev dd , sd v dd , or pll v dd going low by more than 0.4v during power down or there will be undesired high curr ent in the esd protection diodes. there are no requirements for the fa ll times of the power supplies. the recommended power down sequence is as follows: 1. drop iv dd /pll v dd to 0v 2. drop ev dd /sd v dd supplies 5 output driver capability and loading table 6 lists values for drive capability and output loading. table 6. i/o driver capability signal drive capability output load (c l ) sdramc (sdaddr[12:0], sddata[31:0], ras , cas , sddm[3:0], sdwe , sdba[1:0] 24 ma 15 pf sdramc dqs and clocks (sddq s[3:0], sdrdqs, sdclk[1:0], sdclk [1:0], sdcke) 24 ma 15 pf sdramc chip selects (sdcs [3:0]) 24 ma 15 pf flexbus (ad[31:0], fbcs [5:0], ale, r/w , be /bwe [3:0], oe ) 16 ma 20 pf fec (e n mdio, e n mdc, e n txen, e n txd[3:0], e n txer 8 ma 15 pf timer (tout[3:0]) 8 ma 50 pf dack [1:0] 8 ma 30 pf psc (psc n txd[3:0], psc n rts /psc n fsync, 8 ma 30 pf dspi (dspisout, dspics0/ss, dspi cs[2:3], dspics5/pcss) 24 ma 50 pf pci (pciad[31:0], pcibg[4:1], pcibg0/pcireqout, pcidevsel, pcicxbe[3:0], pcifrm, pciperr, pcireset, pciserr, pcistop, pcipar, pcitrdy, pciirdy 16 ma 50 pf i2c (scl, sda) 8 ma 50 pf bdm (pstclk, pstddata[7: 0], dso/tdo, 8 ma 25 pf rsto 8 ma 50 pf
pll timing specifications mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 7 6 pll timing specifications the specifications in table 7 are for the clkin pin. input clock timing diagram table 8 shows the supported pll encodings. table 7. clock timing specification num characteristic min max units c1 cycle time 15.15 33.3 ns c2 rise time (20% of vdd to 80% of vdd) ? 2 ns c3 fall time (80% of vdd to 20% of vdd) ? 2 ns c4 duty cycle (at 50% of vdd) 40 60 % table 8. mcf547x divide ratio encodings ad[12:8] 1 notes: 1 all other values of ad[12:8] are reserved. clock ratio clkin?pci and flexbus frequency range (mhz) internal xl b, sdram bus, and pstclk frequency range (mhz) core frequency range (mhz) 00011 1:2 41.6?66.66 83.33 ?133.33 166.66?266.66 00101 1:2 25.0?44.4 50.0?88.8 2 2 note that ddr memories typically have a minimum speed of 83 mhz. some vendors specify down to 75 mhz. check with memory component specifications to verify. 100.0?177.66 01111 1:4 25.0?33.3 100?133.33 200?266.66 clkin c4 c1 c4 c2 c3
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 reset timing specifications freescale semiconductor 8 figure 4 correlates clkin, internal bus, and core clock frequencies for the 1x?4x multipliers. figure 4. clkin, internal bus, and core clock ratios 7 reset timing specifications table 9 lists specifications for the re set timing parameters shown in figure 5 figure 5 shows reset timing for the values in table 9 . figure 5. reset timing table 9. reset timing specification num characteristic 66 mhz clkin units min max r1 1 notes: 1 rsti and flexbus data lines are synchronized internally. setup and hold times must be met only if recognition on a particular clock is required. valid to clkin (setup) 8 ? ns r2 clkin to invalid (hold) 1.0 ? ns r3 rsti to invalid (hold) 1.0 ? ns 25 50 70 80 100 120 140 160 240 260 60 25.0 clkin (mhz) core clock (mhz) 66.66 200.0 50 70 90 110 30 internal clock (mhz) 2x 2x 4x 2x core clock clkin internal clock 25.0 33.33 130 180 200 220 50.0 133.33 100.0 133.33 266.66 266.66 100.0 clkin r1 r3 r2 r1 rsti mode select flexbus note: mode selects are registered on the rising clock edge before the cycle in which rsti is recognized as being negated.
flexbus mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 9 8flexbus a multi-function external bus interface called flexbus is provided on the mcf5472 with basic functionality to interface to slav e-only devices up to a maximum bus frequency of 66 mhz. it can be directly connected to asynchronous or synchronous devices such as external boot roms, fl ash memories, gate-array logic, or othe r simple target (slave) devices with little or no additiona l circuitry. for asynchronous devices, a simple chip -select based interface can be us ed. the flexbus interface has six general purpose ch ip-selects (fbcs [5:0]). chip-select fbcs0 can be dedicated to boot rom access and can be programmed to be byte (8 bits), word (16 bi ts), or longword (32 bits) wide. control signal timing is compatible with common rom / flash memories. 8.1 flexbus ac timing characteristics the following timing numbers i ndicate when data will be latched or driven onto the external bus, relative to the system clock. table 10. flexbus ac timing specifications num characteristic min max unit notes frequency of operation 25 66 mhz 1 notes: 1 the frequency of operation is the same as the pci frequency of operation. the mcf547x supports a single external reference clock (clkin). this signal defines the frequency of operation for both flexbus and pci. fb1 clock period (clkin) 15.15 33.33 ns 2 2 max cycle rate is determined by clkin and how the user has the system pll configured. fb2 address, data, and control output valid (ad[31:0], fbcs [5:0], r/w , ale, tsiz[1:0], be /bwe [3:0], oe , and tbst ) ?7.0 ns 3 3 timing for chip selects only applies to the fbcs[5:0] signals. please see section 9.2, ?ddr sdram ac timing characteristics ? for sdcs[3:0] timing. fb3 address, data, and control output hold ((ad[31:0], fbcs [5:0], r/w , ale, tsiz[1:0], be /bwe [3:0], oe , and tbst ) 1? ns 3 , 4 4 the flexbus supports programming an extension of the address hold. please consult the mcf547x specification manual for more information. fb4 data input setup 3.5 ? ns fb5 data input hold 0 ? ns fb6 transfer acknowledge (ta ) input setup 4 ? ns fb7 transfer acknowledge (ta ) input hold 0 ? ns fb8 address output valid (pciad[31:0]) ? 7.0 ns 5 5 these specs are used when the pciad[31:0] signals are configured as 32-bit, non-muxed flexbus address signals. fb9 address output hold (pciad[31:0]) 0 ? ns 5
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 flexbus freescale semiconductor 10 figure 6. flexbus read timing clkin ad[x:0] ad[31:y] r/w ale tsiz[1:0] fbcsn , be /bwen oe ta fb1 a[x:0] fb2 fb3 tsiz[1:0] fb4 fb5 fb6 fb7 data a[31:y]
sdram bus mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 11 figure 7. flexbus write timing 9 sdram bus the sdram controller supports acces ses to main sdram memory from any internal master. it supports either standard sdram or double data rate (ddr) sdram, but it does not support both at the same time. the sdram controller uses sstl2 and sstl3 i/o drivers. both sstl driv e modes are programmable for either class i or class ii drive strength. 9.1 sdr sdram ac timing characteristics the following timing numbers i ndicate when data will be latched or driven onto the external bus, relative to the memory bus clock, when opera ting in sdr mode on write cycles and relative to sdr_dqs on read cycles. the mcf547 x sdram controller is a ddr controller that has an sdr mode. because it is designed to support ddr, a dqs pulse must still be supplied to the mcf547 x for each data beat of an sdr read. the mcf547 x accomplishes this by asserting a signal called sdr_dqs du ring read cycles. care must be taken during board design to adhere to the following guidelines and specs with regard to the sdr_dqs signal and its usage. clkin ad[x:0] ad[31:y] r/w ale tsiz[1:0] fbcsn , be /bwen ta fb1 a[x:0] a[31:y] data fb2 fb3 tsiz[1:0] fb3 fb6 fb7 oe
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 sdram bus freescale semiconductor 12 table 11. sdr timing specifications symbol characteristic min max unit notes frequency of operation 0 133 mhz 1 notes: 1 the frequency of operation is either 2x or 4x the clkin frequency of operation. the mcf547x supports a single external reference clock (clkin). this signal defines the frequency of operation for both flexbus and pci, but sdram clock operates at the same frequency as the internal bus clock. please see the pll chapter of the mcf547x specification for more information on setting the sdram clock rate. sd1 clock period (t ck )7.5212ns 2 2 sdclk is one sdram clock in (ns). sd2 clock skew (t sk )tbd sd3 pulse width high (t ckh ) 0.45 0.55 sdclk 3 3 pulse width high plus pulse width low cannot exceed min and max clock period. sd4 pulse width low (t ckl ) 0.45 0.55 sdclk 4 4 pulse width high plus pulse width low cannot exceed min and max clock period. sd5 address, cke, cas, ras, we, ba, cs - output valid (t cmv )0.5 sdclk + 1.0ns ns sd6 address, cke, cas, ras, we, ba, cs - output hold (t cmh )2.0 ns sd7 sdrdqs output valid (t dqsov )self timedns 5 5 sdr_dqs is designed to pulse 0.25 clock before the rising edge of the memory clock. this is a guideline only. subtle variation from this guideline is expected. sdr_dqs will only pulse during a read cycle and one pulse will occur for each data beat. sd8 sddqs[3:0] input setup relative to sdclk (t dqsis )0.25 sdclk 0.40 sdclk ns 6 6 sdr_dqs is designed to pulse 0.25 clock before the rising edge of the memory clock. this spec is a guideline only. subtle variation from this guideline is expected. sdr_dqs will only pulse during a read cycle and one pulse will occur for each data beat. sd9 sddqs[3:0] input hold relative to sdclk (t dqsih ) does not apply. 0.5 sdclk fixed width. 7 7 the sdr_dqs pulse is designed to be 0.5 cl ock in width. the timing of the rising edge is most important. the falling edge does not affect the memory controller. sd10 data input setup relative to sdclk (reference only) (t dis )0.25 sdclk ns 8 8 since a read cycle in sdr mode still uses the dqs circuit wi thin the mcf547x, it is most cr itical that the data valid window be centered 1/4 clk after the rising edge of dqs. ensuring that this happens will re sult in successful sdr reads. the input setup spec is just provided as guidance. sd11 data input hold relative to sdclk (reference only) (t dih )1.0 ns sd12 data and data mask output valid (t dv )0.75 sdclk +0.500ns ns sd13 data and data mask output hold (t dh )1.5ns
sdram bus mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 13 figure 8. sdr write timing sdclk0 sdclk1 sddm sddata sdaddr, sdba[1:0] sd2 cmd row sd2 sd1 sd5 col sd6 wd1 wd2 wd3 wd4 sd13 sd12 sd3 sd4 sdcsn,sdwe, ras, cas
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 sdram bus freescale semiconductor 14 figure 9. sdr read timing 9.2 ddr sdram ac timing characteristics when using the ddr sdram controll er, the following timing numbers must be followed to properly latch or drive data onto the memory bus. all timi ng numbers are relative to the four dqs byte lanes. table 12 shows the ddr clock crossover specifications. table 12. ddr clock crossover specifications symbol characteristic min max unit v mp clock output mid-point voltage 1.05 1.45 v v out clock output voltage level ?0.3 sd_vdd + 0.3 v v id clock output differential voltage (peak to peak swing) 0.7 sd_vdd + 0.6 v v ix clock crossing point voltage 1 notes: 1 the clock crossover voltage is only guaranteed when using the highest drive strength option for the sdclk[1:0] and sdclk [1:0] signals. 1.05 1.45 v sdclk0 sdclk1 sdcsn,sdwe, sddm sddata sdaddr, ras, cas sdba[1:0] sd2 cmd row sd2 sd1 sd5 col wd1 wd2 wd3 wd4 sd10 3/4 mclk sdrqs sddqs delayed sd11 sd8 board delay sd9 board delay sd7 tdqs reference sdclk form memories (measured at output pin) (measured at input pin) sd6 note: data driven from memories relative to delayed memory clock.
sdram bus mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 15 figure 10. ddr clock timing diagram table 13. ddr timing specifications symbol characteristic min max unit notes frequency of operation 50 1 notes: 1 note that ddr memories typically have a minimum speed specification of 83 mhz. check with memory component specifications to verify. 133 mhz 2 2 the frequency of operation is either 2x or 4x the clkin fr equency of operation. the mcf547x supports a single external reference clock (clkin). this signal defines the frequency of operation for both flexbus and pci, but sdram clock operates at the same frequency as the internal bus cloc k. please see section 2.2.6, ?reset configuration pins.? dd1 clock period (t ck )7.5212ns 3 3 sdclk is one memory clock in (ns). dd2 pulse width high (t ckh ) 0.45 0.55 sdclk 4 4 pulse width high plus pulse width low cannot exceed max clock period. dd3 pulse width low (t ckl ) 0.45 0.55 sdclk 5 5 pulse width high plus pulse width low cannot exceed max clock period. dd4 address, sdcke, cas , ras , we , sdba, sdcs ?output valid (t cmv ) ?0.5 sdclk +1.0 ns ns 6 6 command output valid should be 1/2 the memory bus clock (sdclk) plus some minor adjustments for process, temperature, and voltage variations. dd5 address, sdcke, cas , ras , we , sdba, sdcs ?output hold (t cmh ) 2.0 ? ns dd6 write command to first dqs latching transition (t dqss ) ? 1.25 sdclk dd7 data and data mask output setup (dq ?> dqs) relative to dqs (ddr write mode) (t qs ) 1.0 ? ns 7 8 7 this specification relates to the required input setup time of today?s ddr memories. sddata[31:24] is relative to sddqs3, sddata[23:16] is relative to sddqs2, sddata[15:8] is relative to sddqs1, a nd sddata[7:0] is relative sddqs0. dd8 data and data mask output hold (dqs ?> dq) relative to dqs (ddr write mode) (t qh ) 1.0 ? ns 9 dd9 input data skew relative to dqs (input setup) (t is )1ns 10 dd10 input data hold relative to dqs (t ih )0.25 sdclk +0.5ns ?ns 11 dd11 dqs falling edge to sdclk rising (output setup time) (t dss )0.5 ?ns dd12 dqs falling edge from sdclk rising (output hold time) (t dsh )0.5 ? ns dd13 dqs input read preamble width (t rpre ) 0.9 1.1 sdclk dd14 dqs input read postamble width (t rpst ) 0.4 0.6 sdclk dd15 dqs output write preamble width (t wpre )0.25?sdclk dd16 dqs output write postamble width (t wpst ) 0.4 0.6 sdclk sdclk sdclk v ix v mp v ix v id
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 sdram bus freescale semiconductor 16 figure 11. ddr write timing 8 the first data beat will be valid before the first rising edge of sddqs and after the sddqs write preamble. the remaining data beats will be valid for each subsequent sddqs edge. 9 this specification relates to the required hold time of today?s ddr memories. sddata[31:24] is relative to sddqs3, sddata[23:16] is relative to sddqs2, sddata[15:8] is relative to sddqs1, and sddata[7:0] is relative sddqs0. 10 data input skew is derived from each sddqs clock edge. it be gins with a sddqs transition and ends when the last data line becomes valid. this input skew must include ddr memo ry output skew and system level board skew (due to routing or other factors). 11 data input hold is derived from each sddqs clock edge. it begins with a sddqs transition and ends when the first data line becomes invalid. sdclk0 sdclk1 sdcsn , sdwe , sddm sddata sdaddr, ras , cas sdba[1:0] cmd row dd1 dd5 dd4 col wd1 wd2 wd3 wd4 dd7 sddqs dd8 dd8 dd7 sdclk0 sdclk1 dd3 dd2 dd6
pci bus mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 17 figure 12. ddr read timing 10 pci bus the pci bus on the mcf547 x is pci 2.2 compliant. the following timing numbers are mostly from the pci 2.2 spec. please refer to the pci 2.2 sp ec for a more detailed timing analysis. table 14. pci timing specifications num characteristic min max unit notes frequency of operation 25 66 mhz 1 p1 clock period (t ck ) 15.15 33.33 ns 2 p2 address, data, and command (33 < pci 66 mhz)?input setup (t is )3.0 ? ns p3 address, data, and command (0 < pci 33 mhz)?input setup (t is )7.0 ? ns p4 address, data, and command (33-66 mhz) - output valid (t dv )?6.0ns 3 p5 address, data, and command (0 -33 mhz) - output valid (t dv ) ? 11.0 ns sdclk0 sdclk1 sdcsn , sdwe , sddqs sddata sdaddr, ras , cas sdba[1:0] cmd row dd1 dd5 dd4 wd1 wd2 wd3 wd4 sddqs dd9 sdclk0 sdclk1 dd3 dd2 sddata wd1 wd2 wd3 wd4 dd10 cl=2 cl=2.5 col dqs read preamble dqs read postamble dqs read preamble dqs read postamble
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 fast ethernet ac timing specifications freescale semiconductor 18 figure 13. pci timing 11 fast ethernet ac timing specifications 11.1 mii/7-wire interface timing specs the following timing specs are defined at the chip i/o pin and must be tr anslated appropria tely to arrive at timing specs/cons traints for the em ac_10_100 i/o signals. the following timing specs meet the requirements for both mii and 7-wire style interfaces for a range of transceiver devices. if this interface is to be used with a specific tr ansceiver device the timing specs may be altered to match that specific transceiver. p6 pci signals (0 - 66 mhz) - output hold (t dh )0?ns 4 p7 pci signals (0 - 66 mhz) - input hold (t ih )0?ns 5 p8 pci req/gnt (33 < pci 66mhz) - output valid (t dv )?6ns 6 p9 pci req/gnt (0 < pci 33mhz) - output valid (t dv ) ? 12 ns p10 pci req/gnt (33 < pci 66mhz) - input setup (t is )?5ns p11 pci req (0 < pci 33mhz) - input setup (t is )12?ns p12 pci gnt (0 < pci 33mhz) - input setup (t is )10?ns notes: 1 please see section 2.2.6, ?reset configuration pins,? fo r more information on setting the pci clock rate. also specific guidelines may need to be followed when operating the system pll below certain frequencies. 2 max cycle rate is determined by clkin and how the user has the system pll configured. 3 all signals defined as pci bused signals. does not include ptp (point-to-point) signals. 4 pci 2.2 spec does not require an output hold time. altho ugh the mcf547x may provide a slight amount of hold, it is not required or guaranteed. 5 pci 2.2 spec requires zero input hold. 6 these signals are defined at ptp (point-to-point) in the pci 2.2 spec. table 14. pci timing specifications (continued) num characteristic min max unit notes clkin input setup/hold p1 p4 p6 p2 p7 output valid input valid output valid/hold
fast ethernet ac ti ming specifications mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 19 figure 14. mii receive signal timing diagram 11.2 mii transmit signal timing figure 15. mii transmit signal timing diagram table 15. mii receive signal timing num characteristic min max unit m1 rxd[3:0], rxdv, rxer to rxclk setup 5 ? ns m2 rxclk to rxd[3:0], rxdv, rxer hold 5 ? ns m3 rxclk pulse width high 35% 65% rxclk period m4 rxclk pulse width low 35% 65% rxclk period table 16. mii transmit signal timing num characteristic min max unit m5 txclk to txd[3:0], txen, txer invalid 0 ? ns m6 txclk to txd[3:0], txen, txer valid ? 25 ns m7 txclk pulse width high 35% 65% txclk period m8 txclk pulse width low 35% 65% txclk period rxclk (input) rxd[3:0] (inputs) rxdv, rxer m3 m4 m1 m2 txclk (input) txd[3:0] (outputs) txen, txer m7 m8 m5 m6
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 fast ethernet ac timing specifications freescale semiconductor 20 11.3 mii async inputs signal timing (crs, col) figure 16. mii async inputs timing diagram 11.4 mii serial management channel timing (mdio,mdc) figure 17. mii serial management channel timing diagram table 17. mii transmit signal timing num characteristic min max unit m9 crs, col minimum pulse width 1.5 ? tx_clk period table 18. mii serial management channel signal timing num characteristic min max unit m10 mdc falling edge to mdio output invalid (min prop delay) 0? ns m11 mdc falling edge to mdio output valid (max prop delay) ?25 ns m12 mdio (input) to mdc rising edge setup 10 ? ns m13 mdio (input) to mdc rising edge hold 0 ? ns m14 mdc pulse width high 40% 60% mdc period m15 mdc pulse width low 40% 60% mdc period crs, col m9 mdc (output) m14 mdio (output) mdio (input) m15 m10 m11 m12 m13
general timing specifications mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 21 12 general timing specifications table 19 lists timing specificati ons for the gpio, psc, dreq , dack , and external interrupts. 13 i 2 c input/output timing specifications table 20 lists specifications for the i 2 c input timing parameters shown in figure 18 . table 21 lists specifications for the i 2 c output timing parameters shown in figure 18 . table 19. general ac timing specifications name characteristic min max unit g1 clkin high to signal output valid ? 2 pstclk g2 clkin high to signal invalid (output hold) 0 ? ns g3 signal input pulse width 2 ? pstclk table 20. i 2 c input timing specifications between scl and sda num characteristic min max units i1 start condition hold time 2 ? bus clocks i2 clock low period 8 ? bus clocks i3 scl/sda rise time (v il = 0.5 v to v ih = 2.4 v) ? 1 ms i4 data hold time 0 ? ns i5 scl/sda fall time (v ih = 2.4 v to v il = 0.5 v) ? 1 ms i6 clock high time 4 ? bus clocks i7 data setup time 0 ? ns i8 start condition setup time (for repeated start condition only) 2 ? bus clocks i9 stop condition setup time 2 ? bus clocks
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 i 2 c input/output timing specifications freescale semiconductor 22 figure 18 shows timing for the values in table 20 and table 21 . figure 18. i 2 c input/output timings table 21. i 2 c output timing specifications between scl and sda num characteristic min max units i1 1 notes: 1 note: output numbers depend on the value programmed into the ifdr; an ifdr programmed with the maximum frequency (ifdr = 0x20) results in minimum output timings as shown in ta b l e 2 1 . the i 2 c interface is designed to scale the actual data transition time to move it to the middle of the scl low period. the actual position is affected by the prescale and division values programmed into the ifdr; however, the numbers given in ta b l e 2 1 are minimum values. start condition hold time 6 ? bus clocks i2 1 clock low period 10 ? bus clocks i3 2 2 because scl and sda are open-collector-type outp uts, which the processor can only actively drive low, the time scl or sda take to reach a high level depends on external signal capacitance and pull-up resistor values. scl/sda rise time (v il = 0.5 v to v ih = 2.4 v) ? ? s i4 1 data hold time 7 ? bus clocks i5 3 3 specified at a nominal 50-pf load. scl/sda fall time (v ih = 2.4 v to v il = 0.5 v) ? 3 ns i6 1 clock high time 10 ? bus clocks i7 1 data setup time 2 ? bus clocks i8 1 start condition setup time (for repeated start condition only) 20 ? bus clocks i9 1 stop condition setup time 10 ? bus clocks scl i2 i6 i1 i4 i5 i7 i8 i3 i9 sda
jtag and boundary scan timing mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 23 14 jtag and boundary scan timing figure 19. test clock input timing table 22. jtag and boundary scan timing num characteristics 1 notes: 1 mtmod is expected to be a static signal. henc e, it is not associated with any timing symbol min max unit j1 tclk frequency of operation f jcyc dc 10 mhz j2 tclk cycle period t jcyc 2?t ck j3 tclk clock pulse width t jcw 15.15 ? ns j4 tclk rise and fall times t jcrf 0.0 3.0 ns j5 boundary scan input data setup time to tclk rise t bsdst 5.0 ? ns j6 boundary scan input data hold time after tclk rise t bsdht 24.0 ? ns j7 tclk low to boundary scan output data valid t bsdv 0.0 15.0 ns j8 tclk low to boundary scan output high z t bsdz 0.0 15.0 ns j9 tms, tdi input data setup time to tclk rise t tapbst 5.0 ? ns j10 tms, tdi input data ho ld time after tclk rise t tapbht 10.0 ? ns j11 tclk low to tdo data valid t tdodv 0.0 15.0 ns j12 tclk low to tdo high z t tdodz 0.0 15.0 ns j13 trst assert time t trstat 100.0 ? ns j14 trst setup time (negation) to tclk high t trstst 10.0 ? ns tclk (input) j2 j3 j3 j4 j4 v ih v il
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 jtag and boundary scan timing freescale semiconductor 24 figure 20. boundary scan (jtag) timing figure 21. test access port timing figure 22. trst timing debug ac timing specifications output data valid tclk data inputs data outputs data outputs data outputs 5 6 input data valid 7 output data valid 8 7 v ih v il output data valid tclk tdi, tms, bkpt tdo tdo tdo 9 10 input data valid 11 output data valid 12 11 v ih v il tclk trst 14 13
jtag and boundary scan timing mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 freescale semiconductor 25 table 23 lists specifications for the de bug ac timing parameters shown in figure 24 . figure 23 shows real-time trace timing for the values in table 23 . figure 23. real-time trace ac timing figure 24 shows bdm serial port ac timing for the values in table 23 . figure 24. bdm serial port ac timing table 23. debug ac timing specification num characteristic 66 mhz units min max d1 pstddata to pstclk setup 4.5 ns d2 pstclk to pstddata hold 4.5 ns d3 dsi-to-dsclk setup 1 pstclks d4 1 notes: 1 dsclk and dsi are synchronized internally. d4 is measured from the synchronized dsclk input relative to the rising edge of clkout. dsclk-to-dso hold 4 pstclks d5 dsclk cycle time 5 pstclks pstclk pstddata[7:0] d1 d2 past current dsclk dsi dso next current d5 d3 d4
mcf547x integrated microprocessor el ectrical characteristics, rev. 2.1 dspi electrical specifications freescale semiconductor 26 15 dspi electrical specifications table 24 lists dspi timings. the values in table 24 correspond to figure 25 . figure 25. dspi timing 16 timer module ac timing specifications table 25 lists timer module ac timings. table 24. dspi modules ac timing specifications name characteristic min max unit ds1 dspi_cs[3:0] to dspi_clk 1 tck 510 tck ns ds2 dspi_clk high to dspi_dout valid. ? 12 ns ds3 dspi_clk high to dspi_dout invalid. (output hold) 2 ? ns ds4 dspi_din to dspi_clk (input setup) 10 ? ns ds5 dspi_din to dspi_clk (input hold) 10 ? ns table 25. timer module ac timing specifications name characteristic 0?66 mhz unit min max t1 tin0 / tin1 / tin2 / tin3 cycle time 3 ? pstclk t2 tin0 / tin1 / tin2 / tin3 pulse width 1 ? pstclk dspi_cs[3:0] dspi_clk dspi_dout dspi_din ds5 ds4 ds1 ds2 ds3
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